Toshiba recently announced that the company has spruced up their NAND flash portfolio by introducing a new range of higher performance 24-nanometer (nm) e-MMCTM devices. Wait here, e-what? Basically, these higher NAND flash devices will rely on toggle-mode double data rate NAND to reduce bottlenecks that are more often than not encountered by single data rate NAND, helping give a boost to faster random access and sequential performance.
You will be able to see devices carrying these new NAND flash memory that come in a wide range of capacities, starting from just 1GB and going all the way to 128GB (at a price, of course), and will also sport “the world’s smallest geometry e-MMC,” which is touted to be one of the highest capacities achieved in the industry.
Currently, samples of the 8GB, 16GB, 32GB and 64GB 24nm e-MMC product family are available, so expect mass production to occur in Q3 2011 before seeing action in consumer electronic devices later on. [Press Release]
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