A joint development project on a next-generation memory chip has been launched in Japan by Elpida Memory Inc, Sharp Corp, the University of Tokyo and Japan’s National Institute of Advanced Industrial Science and Technology (AIST) as they plan to co-develop a gigabit-class resistive random access memory (ReRAM) chip. This will combine Sharp’s material technologies related to resistance change devices and Elpida’s volume production technologies for memory chips. The next-generation memory chip is expected to be used in situations such as cache memory that is positioned between DRAM and NAND flash memory. When ReRAM is used as cache memory on an SSD, it’s even possible to reduce power consumption by 97% and to increase the tolerable bit error rate, which is an indicator of operation reliability, by 260%.
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